| PART |
Description |
Maker |
| ASTD-5060-860 ASTD ASTD-1020-51 ASTD-1020-820 ASTD |
18 GHz, SILICON, TUNNEL DIODE
PLANAR TUNNEL (BACK) DIODE
From old datasheet system
|
ADVANCED SEMICONDUCTOR INC
ASI[Advanced Semiconductor]
|
| ASTD ASTD-3040-860 ASTD-1020-860 ASTD-2030-860 AST |
PLANAR TUNNEL (BACK) DIODE 平面隧道（返回）二极
|
Advanced Semiconductor, Inc.
|
| Q62702-A764 BAT30 |
silicon sohottlky diode RF detector low-power bias very low capaacitance For freguencies up to 25Ghz
FILTER BANDPASS 2.4GHZ 1008 SMD
silicon schottky diode (RF detector Low-power mixer Zerobias Very low capacitance for frequencies up to 25 GHz)
From old datasheet system
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| MA44768RT3 MA44769RT3 |
2.5 GHz, SILICON, STEP RECOVERY DIODE
|
|
| Q62702-F610 BF979S Q62702-B628 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) 硅调谐二极管（Extented频率高达2.5千兆特别设计了一种用于电视使用税务总局室内单元
PNP SILICON PLANAR TRANSISTOR
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| DSEP2X31-03A DSEP2X31-04A DSEP2X31-12A DSEP2X31-06 |
30 A, 300 V, SILICON, RECTIFIER DIODE MINIBLOC-4
30 A, 400 V, SILICON, RECTIFIER DIODE MINIBLOC-4
30 A, 1200 V, SILICON, RECTIFIER DIODE MINIBLOC-4
30 A, 600 V, SILICON, RECTIFIER DIODE MINIBLOC-4
60 A, 1200 V, SILICON, RECTIFIER DIODE MINIBLOC-4
HiPerFREDTM Epitaxial Diode with soft recovery 30 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC
Versatile Miniature Switch, High Performance
|
IXYS, Corp.
IXYS CORP
|
| AMD-8131BLC |
Hyper Transport PCI-X Tunnel
|
Advanced Micro Devices
|
| CWT-106 |
CUSTOMIZED RESEARCH QUALITY WIND TUNNEL
|
Advanced Thermal Soluti...
|
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